Silicon Carbide Deposition

Chemical Vapor Deposition System for Theoretically Dense Silicon Carbide

The CVD silicon carbide process combines decomposed methyltrichlorolsilane (MTS) with hydrogen at elevated temperature and reduced pressure at a substrate surface for a controlled deposit of pure theoretically dense silicon carbide. Our Silicon Carbide furnaces utilize our revolutionary vapor delivery system which ensures a constant, uniform and repeatable source of MTS vapor.  TevTech CVD Silicon Carbide furnaces deliver unrivaled silicon carbide quality and deposit uniformity through precise control of MTS delivery along with control of hydrogen delivery, substrate temperature and pressure. The silicon carbide deposit takes place in an encapsulated hot zone to reduce maintenance and to eliminate highly reactive by-products. Hot zones with a working zone size range of 12" diameter by 12" high to 60" diameter by 60" high are available.

• Silicon Carbide deposit thickness ranges from a coating of 20-40m m to a free standing structure.



• Coating uniformity within +/- 10% routinely achieved in the specified work zone.



• The uniquely designed vapor delivery system provides a repeatable, uniform source of MTS vapor.



• Hot Zone Encapsulation Method ensures the cleanliness of the operation and long life of the cold wall furnace chamber.

• Vapor Delivery System and Gas Flow Measurement system.
• Vacuum Chamber with load lifting mechanism.
• Internal Set Up, Hot Zone, and Heating Element.
• Power Supply and Power Distribution System.
• Vacuum Pumping System, Manifolds, and Dust Handling Systems.
• Cooling Water Flow Manifolds and Safety Interlocks.
• Alarms and Interlocks for Safety, Gas Leak Detection, Process Deviation, and Equipment Protection.
• Instrumentation and Process Control System.
• Substrate rotation or planetary rotation available.

OPTIONAL EQUIPMENT AVAILABLE:

• Enhanced Automated Process Control Package
• Cooling Water Recirculation System
• Utility Vacuum System
• Substrate Rotation System